data sheet 1 of 9 rev. 03, 2008-03-04 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTFA210301E package h-30265-2 PTFA210301E description the PTFA210301E is a thermally-enhanced, 30-watt, internally matched goldmos fet intended for wcdma applications. it is optimized for single- and two-carrier wcdma operation from 2110 to 2170 mhz. thermally-enhanced packaging provides the coolest operation available. full gold metallization ensures excellent device lifetime and reliability. features ? thermally-enhanced packaging, pb-free and rohs-compliant ? broadband internal matching ? typical two-carrier wcdma performance at 2140 mhz, 28 v - average output power = 33 dbm - linear gain = 16.5 db - intermodulation distortion = ?50 dbc - adjacent channel power = ?52 dbc ? typical cw performance, 2170 mhz, 28 v - output power at p?1db = 40 w - efficiency = 59% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 30 w (cw) output power thermally-enhanced high power rf ldmos fet 30 w, 2110 ? 2170 mhz 2-carrier wcdma drive-up v dd = 28 v, i dq = 300 ma, f = 2140 mhz, 3gpp wcdma signal, p/a r = 8 db, 10 mhz carrier spacing -55 -50 -45 -40 -35 -30 -25 27 29 31 33 35 37 39 41 average output power (dbm) im3 (dbc), acpr (dbc) 0 5 10 15 20 25 30 drain efficiency (%) efficiency acpr im3 im3 low im3 up *see infineon distributor for future availability. rf characteristics 2-carrier wcdma measurements ( not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq = 300 ma, p out = 8 w average f 1 = 2135 mhz, f 2 = 2145 mhz, 3gpp signal, channel bandwidth = 3.84 mhz , peak/average = 8 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps ? 17 ? db drain efficiency h d ? 27 ? % intermodulation distortion imd ? ?38 ? dbc
PTFA210301E data sheet 2 of 9 rev. 03, 2008-03-04 rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 300 ma, p out = 30 w pep, f = 2170 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 16 17 ? db drain efficiency h d 34 36 ? % intermodulation distortion imd ? ?32 ?30 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 a v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.23 ? w operating gate voltage v ds = 28 v, i dq = 300 ma v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 145 w above 25c derate by 0.83 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 30 w cw) r q jc 1.2 c/w ordering information type and version package outline package description marking PTFA210301E v1 h-30265-2 thermally-enhanced slotted flange, single-ended PTFA210301E *see infineon distributor for future availability.
PTFA210301E data sheet 3 of 9 rev. 03, 2008-03-04 broadband performance v dd = 28 v, i dq = 300 ma, p out = 38.0 dbm 10 15 20 25 30 35 2070 2090 2110 2130 2150 2170 2190 2210 frequency (mhz) gain (db), efficiency (%) -30 -25 -20 -15 -10 -5 input return loss (db) gain efficiency return loss power sweep, cw conditions v dd = 28 v, i dq = 300 ma, f = 2170 mhz 14 15 16 17 18 19 0 10 20 30 40 50 output power (w) gain (db) 10 20 30 40 50 60 drain efficiency (%) gain efficiency t case = 25c t case = 90c typical performance (data taken in a production test fixture) intermodulation distortion products vs. tone spacing v dd = 28v i dq = 300 ma, f = 2140 mhz, p out = 45 dbm pep -60 -55 -50 -45 -40 -35 -30 -25 -20 0 5 10 15 20 25 30 35 40 tone spacing (mhz) intermodulation distortion (dbc) 3rd order 5th 7th two-carrier wcdma at various biases v dd = 28 v, f = 2140 mhz, 3gpp wcdma signal, p/ar = 8 db, 10 mhz carrier spacing, series show i dq -57 -52 -47 -42 -37 -32 27 30 33 36 39 output power, avg. (dbm) 3rd order imd (dbc) 250 ma 400 ma 350 ma 300 ma
PTFA210301E data sheet 4 of 9 rev. 03, 2008-03-04 im3, drain efficiency and gain vs. supply voltage i dq = 300 ma, f = 2140 mhz, p out (pep) = 45 dbm, tone spacing = 1 mhz -45 -40 -35 -30 -25 -20 -15 -10 23 24 25 26 27 28 29 30 31 32 33 supply voltage (v) 3rd order intermodulation distortion (dbc) 10 15 20 25 30 35 40 45 50 gain efficiency im3 up gain (db), drain efficiency (%) bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.06 a 0.20 a 0.33 a 0.50 a 1.10 a 1.50 a 2.00 a 2.50 a 3.00 a single-carrier wcdma drive-up v dd = 28 v, i dq = 300 ma, f = 2140 mhz, 3gpp wcdma signal, tm1 w/16 dpch, 67% clipping, p/a r = 8.5 db, 3.84 mhz bw -55 -50 -45 -40 -35 28 32 36 40 average output power (dbm) 0 10 20 30 40 drain efficiency (%) acpr low acpr up adjacent channel power ratio (db) efficiency 2-tone drive-up v dd = 28 v, i dq = 300 ma, f = 2140 mhz, tone spacing = 1 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 -20 30 32 34 36 38 40 42 44 46 48 output power, pep (dbm) 0 5 10 15 20 25 30 35 40 45 drain efficiency (%) im5 efficiency im7 im3 intermodulation distortion (dbc) typical performance (cont.)
PTFA210301E data sheet 5 of 9 rev. 03, 2008-03-04 broadband circuit impedance z source z load g s d frequency z source w z load w mhz r jx r jx 2070 14.70 -9.41 7.26 -3.82 2110 14.33 -9.52 7.01 -3.70 2140 14.07 -9.61 6.91 -3.69 2170 13.81 -9.69 6.77 -3.53 2210 13.40 -9.79 6.52 -3.39 0.1 0.3 0.5 0.2 0.4 0 . 1 0 . 1 0 . 2 < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 2210 mhz 2210 mhz 2070 mhz 2070 mhz z load z source z 0 = 50 w
PTFA210301E data sheet 6 of 9 rev. 03, 2008-03-04 reference circuit reference circit schematic for f = 2140 mhz circuit assembly information dut PTFA210301E ldmos transistor pcb 0.76 mm [.030?] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 2140 mhz 1 dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.013 l , 50.0 w 1.02 x 1.42 0.040 x 0.056 l 2 0.081 l , 50.0 w 6.17 x 1.42 0.243 x 0.056 l 3 0.108 l , 42.0 w 8.23 x 1.85 0.324 x 0.073 l 4 0.172 l , 61.0 w 13.39 x 0.94 0.527 x 0.037 l 5 0.013 l , 42.0 w 0.94 x 1.85 0.037 x 0.073 l 6 0.023 l , 15.0 w 1.63 x 7.57 0.064 x 0.298 l 7 0.063 l , 9.9 w 4.29 x 12.07 0.169 x 0.475 l 8 0.171 l , 53.0 w 13.13 x 1.22 0.517 x 0.048 l 9 0.039 l , 6.5 w 2.64 x 19.10 0.104 x 0.752 l 10 (taper) 0.185 l , 6.5 w / 50.0 w 4.70 x 19.10 / 1.37 0.185 x 0.752 / 0.054 l 11 0.025 l , 50.0 w 1.88 x 1.42 0.074 x 0.056 l 12 0.128 l , 50.0 w 9.78 x 1.42 0.385 x 0.056 l 13 0.057 l , 50.0 w 4.32 x 1.42 0.170 x 0.056 1 electrical characteristics are rounded. a210301ef_sch rf_out rf_in r3 2k v r4 2k v c3 0.001f c2 0.001f bcp56 r2 1.3k v r1 1.2k v lm7805 c1 0.001f qq1 q1 r5 10 v c13 0.02f l 3 l 1 0.3pf c10 l 2 c11 10pf r6 5.1k c5 0.1f c4 10 f 35v 5.1k r7 v v dut l 5 l 4 l 6 l 9 l 10 10pf 1f c6 c7 0.1f c8 .01f c9 v r8 1k 10 r9 v l 7 l 8 c12 10pf 0.7pf l 11 c16 l 12 10pf c17 l 13 c14 1f c15 10f 50v v dd v dd
PTFA210301E data sheet 7 of 9 rev. 03, 2008-03-04 reference circuit (cont.) a210301ef_assy rf_in rf_out r4 qq1 q1 c5 c1 r1 c2 r2 r5 r3 c17 c10 c11 c4 r7 c3 r9 c9 r6 r8 c8 c6 c7 c14 c13 c16 10 35v + lm c15 c12 r9 a210301ef_dtl c1 r2 c3 r3 qq1 q1 c4 c5 r5 c2 r4 c9 + lm r1 r6 r7 c6 c7 c8 r8 component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4 tantalum capacitor, 10 f, 35 v digi-key pcs6106tr-nd c5, c7 capacitor, 0.1 f digi-key p4525-nd c6, c14 capacitor, 1 f digi-key pcc104bct-nd c8 capacitor, 0.01 f atc 100b 103 c9, c11, c12, c17 capacitor, 10 pf atc 100b 100 c10 capacitor, 0.3 pf atc 100b 0r3 c13 capacitor, 0.02 f atc 100b 203 c15 tantalum capacitor, 10 f, 50 v garrett electronics tps106k050r0400 c16 capacitor, 0.7 pf atc 100b 0r7 q1 transistor infineon bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor, 1.2 k-ohms digi-key p1.2kgct-nd r2 chip resistor, 1.3 k-ohms digi-key p1.3kgct-nd r3 chip resistor, 2 k-ohms digi-key p2kect-nd r4 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd r5 chip resistor, 10 ohms digi-key p10ect-nd r6, r7 chip resistor, 5.1 k-ohms digi-key p5.1kect-nd r8 chip resistor, 1 k-ohms digi-key p1.0kgct-nd r9 chip resistor, 10 k-ohms digi-key p10gct-nd reference circuit* (not to scale) *gerber files for this circuit available on request
PTFA210301E data sheet 8 of 9 rev. 03, 2008-03-04 package outline specifications package h-30265-2 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower 20.31 [.800] 10.160.25 [.400.010] 2x 2.590.38 [.107 .015] flange 9.78 [.385] 2x 7.11 [.280] 7.11 [.280] 15.23 [.600] 4x 1.52 [.060] c l c l (45 x 2.03 [.080]) s d g 2x r1.60 [.063] lid 10.160.25 [.400.010] 0.0381 [.0015] -a- 3.480.38 [.137.015] 1.02 [.040] sph 1.57 [.062] 15.600.51 [.614.020] h-30265-2-1-2303
data sheet 9 of 9 rev. 03, 2008-03-04 we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go ldmos) usa or +1 408 776 0600 international goldmos ? is a registered trademark of infineon technologies ag. edition 2008-03-04 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2004. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. PTFA210301E/f confidential, limited internal distribution revision history: 2008-03-04 data sheet previous version: 2005-06-22 , data sheet, rev. 02 page subjects (major changes since last revision) all remove references to alternate products.
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